Kayex Crystal Growing TechnologyKayex Crystal Growing Technology

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Kayex CG6000 Silicon Crystal Growing Furnace


CG6000 6 inch ingot silicon crystal growing furnace
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The Kayex CG6000 Silicon Crystal Growing furnace is capable of growing silicon ingots up to 6 inches in diameter.

Performance

Typical Ingot Diameter 6" (150 mm)
Pull Chamber Door Opening (W x H) 11" x 68" (279 x 1727 mm)
Throat Diameter 10" (254mm)
Seed Lift Rate 0-20 in/hr (0-508 mm/hr)
Seed Jog Speed (Nominal) 20 in/min (508 mm/min)
Total Crucible Travel 11.5" (292 mm)
Crucible Lift Rate 0-10 in/hr (0-254 mm/hr)
Crucible Jog Speed (Nominal) 2.0 in/min (50.8 mm/min)
Seed Rotation (Reversible) 0-50 rpm
Crucible Rotation (Reversible) 0-20 rpm
Vacuum Pumps-Main 107 cfm (3030 l/min)
(Recommended) Aux 21 cfm (594 l/min)

Silicon Charge Capacity

Standard Hot Zones for the CG6000 are available to fit the following crucible sizes:

Crucible Diameter Crucible Height Charge Size
Cold Pack
14 inches 11 inches 30 kg
16 inches 12 inches 45 kg
18 inches 13.5 inches 60 kg

Utility Requirements

Electrical Furnace

190 kVA, 380 / 400 / 440 460 ±10% VAC. 3Ø 50/60 Hz, FUSED FOR 375 / 350 / 325 / 300 amps
Coolant Water
      Maximum Inlet Temperature 77° F (25°C)
      Minimum Flow Rate 49 gpm (185.5 l/min) total
      Diff. Supply Pressure 38 psi (2.7 kg/cm2)
Argon
Mass Flow Control (Max.) 200 slpm
Recommended Supply       Pressure 75 psi (5.3 kg/cm2)
Purge Flow 75 slpm
Facility Total 275 slpm
Air
Recommended Supply       Pressure 90 psi (6.3 kg/cm2)

Dimensions

  Furnace Overall Control Enclosure Power Supply
(Heater)
Height 206 in (5.22 m) 63 in (1.60 m) 39 in (0.98 m)
Width 75 in (1.91 m) 26 in (0.66 m) 31 in (0.77 m)
Depth 118 in (3.00 m) 36 in (0.91 m) 44 in (1.12 m)
Weight  4,550 kg
(10,000 lb)
   

 

CG6000 Footprint

 

CG6000 Side View

 

CG6000 Console/Power Supply

 

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