Kayex Crystal Growing TechnologyKayex Crystal Growing Technology

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Kayex CG3000 Silicon Crystal Growing Furnace


CG3000 4 inch ingot silicon crystal growing furnace

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CG3000 Overview

The Kayex CG3000 Silicon Crystal Growing furnace is capable of growing silicon ingots up to 4 inches in diameter.

Performance

Typical Ingot Diameter 5" (125 mm)
Pull Chamber Height 8” x 52” (203 x 1321 mm)
Throat Diameter 7" (178 mm)
Seed Lift Rate 0-20 in/hr (0-508 mm/hr)
Seed Jog Speed (Nominal) 20 in/min (508 mm/min)
Total Crucible Travel 11.5” (292 mm)
Crucible Lift Rate 0-10 in/hr (0-254 mm/hr)
Crucible Jog Speed (Nominal) 2.0 in/min (50.8 mm/min)
Seed Rotation (Reversible) 0-50 rpm
Crucible Rotatio (Reversible) 0-20 rpm
Vacuum Pumps Main 60 cfm (1700 l/min)
(Min. recommended) Aux 21 cfm (594 l/min)

Silicon Charge Capacity

Hot zones are available to fit the following crucible sizes. Charges can be enhanced with a feeder.

Crucible
Diameter
Crucible
Height
Charge Size Cold Pack
10.0 in 7.0 in 12 kg
12.0 in 9.0 in 18 kg
14.0 in 11.0 in 30 kg

Utility Requirements

Electrical Furnace: 160 kVA, 380 / 400 / 440 460 ±10% VAC. 3 PHASE 50/60 Hz, FUSED FOR 325 / 300 / 275 / 250 amps
Coolant Water
Maximum Inlet Temperature 77°F (25°C)
      Minimum Flow Rate 35 gpm (132 l/min) total
      Diff. Supply Pressure 30 psi (2.1 kg/cm 2)
Argon
Mass Flow Control (Max.) 100 slpm
Purge Flow 75 slpm
Facility Total 175 slpm
Recommended Supply       Pressure 75 psi (5.3 kg/cm 2)
Air
Recommended Supply       Pressure 90 psi (6.3 kg/cm 2)

Dimensions

 

Furnace
Overall
Control Console Power
Supply
Height 182 in (4.63 m) 63 in (1.60 m) 39 in (0.98 m)
Width 75 in (1.87 m) 26 in (0.66 m) 31 in (0.77 m)
Depth 118 in (2.20 m) 36 in (0.91 m) 44 in (1.21 m)
Weight  8,000 lbs (3,640 kg)    

CG3000 Footprint

 

CG3000 Side View

 

CG3000 Console/Power Supply

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